ESH1BHE3_A/I Bei (USD) [678920pcs Hisa]
- 1 pcs$0.05448
- Nambari ya Sehemu:
- ESH1BHE3_A/I
- Mzalishaji:
- Vishay Semiconductor Diodes Division
- Maelezo ya kina:
- DIODE GEN PURP 100V 1A DO214AC. Rectifiers 1A, 100V, 25NS, SMA AEC-Q101 Qualified
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
- Faida ya Ushindani:
- We specialize in Vishay Semiconductor Diodes Division ESH1BHE3_A/I electronic components. ESH1BHE3_A/I can be shipped within 24 hours after order. If you have any demands for ESH1BHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ESH1BHE3_A/I Sifa za Bidhaa
Nambari ya Sehemu :
ESH1BHE3_A/I
Mzalishaji :
Vishay Semiconductor Diodes Division
Maelezo :
DIODE GEN PURP 100V 1A DO214AC
Mfululizo :
Automotive, AEC-Q101
Hali ya Sehemu :
Active
Aina ya Diode :
Standard
Voltage - DC Reverse (Vr) (Max) :
100V
Sasa - Wastani Aliyerekebishwa (Io) :
1A
Voltage - Mbele (Vf) (Max) @ Kama :
900mV @ 1A
Kasi :
Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
25ns
Sasa - Rejea kuvuja @ Vr :
1µA @ 100V
Uwezo @ Vr, F :
25pF @ 4V, 1MHz
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
DO-214AC, SMA
Kifurushi cha Kifaa cha Mtoaji :
DO-214AC (SMA)
Joto la Kufanya kazi - Junction :
-55°C ~ 175°C
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