Rohm Semiconductor - RF081LAM2STR

KEY Part #: K6458417

RF081LAM2STR Bei (USD) [1309823pcs Hisa]

  • 1 pcs$0.03122
  • 3,000 pcs$0.03106
  • 6,000 pcs$0.02796
  • 15,000 pcs$0.02485
  • 30,000 pcs$0.02330
  • 75,000 pcs$0.02066

Nambari ya Sehemu:
RF081LAM2STR
Mzalishaji:
Rohm Semiconductor
Maelezo ya kina:
DIODE GEN PURP 200V 1.1A PMDTM. Rectifiers 200V Vr 1A Io Fast Recovery Diode
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Bridge Rectifiers, Transistors - FET, MOSFETs - Moja, Thyristors - SCR, Transistors - JFETs, Viwango - Zener - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Rectifiers - Arrays and Transistors - FET, MOSFETs - Arrays ...
Faida ya Ushindani:
We specialize in Rohm Semiconductor RF081LAM2STR electronic components. RF081LAM2STR can be shipped within 24 hours after order. If you have any demands for RF081LAM2STR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RF081LAM2STR Sifa za Bidhaa

Nambari ya Sehemu : RF081LAM2STR
Mzalishaji : Rohm Semiconductor
Maelezo : DIODE GEN PURP 200V 1.1A PMDTM
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Sasa - Wastani Aliyerekebishwa (Io) : 1.1A
Voltage - Mbele (Vf) (Max) @ Kama : 980mV @ 1A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 25ns
Sasa - Rejea kuvuja @ Vr : 10µA @ 200V
Uwezo @ Vr, F : -
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : SOD-128
Kifurushi cha Kifaa cha Mtoaji : PMDTM
Joto la Kufanya kazi - Junction : 150°C (Max)

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