Toshiba Semiconductor and Storage - RN1104MFV,L3F

KEY Part #: K6526293

RN1104MFV,L3F Bei (USD) [3227101pcs Hisa]

  • 1 pcs$0.01152
  • 8,000 pcs$0.01146

Nambari ya Sehemu:
RN1104MFV,L3F
Mzalishaji:
Toshiba Semiconductor and Storage
Maelezo ya kina:
TRANS PREBIAS NPN 0.15W VESM.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - Moja, Transistors - FET, MOSFETs - Moja, Viwango - Rectifiers - Arrays, Transistors - JFETs, Transistors - Bipolar (BJT) - RF and Transistors - Ushirikiano uliopangwa ...
Faida ya Ushindani:
We specialize in Toshiba Semiconductor and Storage RN1104MFV,L3F electronic components. RN1104MFV,L3F can be shipped within 24 hours after order. If you have any demands for RN1104MFV,L3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN1104MFV,L3F Sifa za Bidhaa

Nambari ya Sehemu : RN1104MFV,L3F
Mzalishaji : Toshiba Semiconductor and Storage
Maelezo : TRANS PREBIAS NPN 0.15W VESM
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : NPN - Pre-Biased
Sasa - Mtoza (Ic) (Max) : 100mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 47 kOhms
Upinzani - Base ya Emitter (R2) : 47 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Saturdayation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA
Sasa - Ushuru Mtoaji : 500nA
Mara kwa mara - Mpito : -
Nguvu - Max : 150mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : SOT-723
Kifurushi cha Kifaa cha Mtoaji : VESM

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