IXYS-RF - IXFH6N100F

KEY Part #: K6393702

IXFH6N100F Bei (USD) [10590pcs Hisa]

  • 1 pcs$4.90940
  • 10 pcs$4.41758
  • 100 pcs$3.63216
  • 500 pcs$3.04315

Nambari ya Sehemu:
IXFH6N100F
Mzalishaji:
IXYS-RF
Maelezo ya kina:
MOSFET N-CH 1000V 6A TO247.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Viwango - Bridge Rectifiers, Viwango - Zener - Moja, Transistors - Bipolar (BJT) - Moja, Thyristors - SCR, Thyristors - SCRs - Moduli, Transistors - FET, MOSFETs - Moja and Transistors - Kusudi Maalum ...
Faida ya Ushindani:
We specialize in IXYS-RF IXFH6N100F electronic components. IXFH6N100F can be shipped within 24 hours after order. If you have any demands for IXFH6N100F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFH6N100F Sifa za Bidhaa

Nambari ya Sehemu : IXFH6N100F
Mzalishaji : IXYS-RF
Maelezo : MOSFET N-CH 1000V 6A TO247
Mfululizo : HiPerRF™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 1000V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 1.9 Ohm @ 3A, 10V
Vgs (th) (Max) @ Id : 5.5V @ 2.5mA
Malango ya Lango (Qg) (Max) @ Vgs : 54nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1770pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 180W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-247 (IXFH)
Kifurushi / Kesi : TO-247-3