SQJ411EP-T1_GE3 Bei (USD) [147465pcs Hisa]
- 1 pcs$0.25082
- 3,000 pcs$0.21196
- Nambari ya Sehemu:
- SQJ411EP-T1_GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET P-CH 12V 60A POWERPAKSO-8.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Moduli, Thyristors - DIAC, SIDAC, Thyristors - TRIAC, Transistors - Kusudi Maalum, Thyristors - SCRs - Moduli, Viwango - Rectifiers - Arrays and Transistors - Bipolar (BJT) - Kufika ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SQJ411EP-T1_GE3 electronic components. SQJ411EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ411EP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJ411EP-T1_GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SQJ411EP-T1_GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET P-CH 12V 60A POWERPAKSO-8
Mfululizo :
Automotive, AEC-Q101, TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
12V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
60A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
5.8 mOhm @ 15A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
150nC @ 4.5V
Vgs (Max) :
±8V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
9100pF @ 6V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
68W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PowerPAK® SO-8
Kifurushi / Kesi :
PowerPAK® SO-8
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
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