Infineon Technologies - IDP30E120XKSA1

KEY Part #: K6441302

IDP30E120XKSA1 Bei (USD) [32584pcs Hisa]

  • 1 pcs$0.87801
  • 10 pcs$0.78854
  • 100 pcs$0.63380
  • 500 pcs$0.52073
  • 1,000 pcs$0.43146

Nambari ya Sehemu:
IDP30E120XKSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
DIODE GEN PURP 1.2KV 50A TO220-2.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Kusudi Maalum, Viwango - Bridge Rectifiers, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Arrays, Transistors - IGBTs - Moja and Transistors - Bipolar (BJT) - Moja ...
Faida ya Ushindani:
We specialize in Infineon Technologies IDP30E120XKSA1 electronic components. IDP30E120XKSA1 can be shipped within 24 hours after order. If you have any demands for IDP30E120XKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IDP30E120XKSA1 Sifa za Bidhaa

Nambari ya Sehemu : IDP30E120XKSA1
Mzalishaji : Infineon Technologies
Maelezo : DIODE GEN PURP 1.2KV 50A TO220-2
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 1200V
Sasa - Wastani Aliyerekebishwa (Io) : 50A (DC)
Voltage - Mbele (Vf) (Max) @ Kama : 2.15V @ 30A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 243ns
Sasa - Rejea kuvuja @ Vr : 100µA @ 1200V
Uwezo @ Vr, F : -
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : TO-220-2
Kifurushi cha Kifaa cha Mtoaji : PG-TO220-2-2
Joto la Kufanya kazi - Junction : -55°C ~ 150°C

Unaweza pia Kuvutiwa Na
  • VS-HFA04SD60S-M3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 4A TO252AA. Diodes - General Purpose, Power, Switching 4A 600V Ultrafast 17ns HEXFRED

  • VS-E4PH6006L-N3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 60A TO247AD. Rectifiers 600V 60A FRED Pt TO-247 LL 2L

  • VS-EPH3006LHN3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 30A TO247AD. Rectifiers 600V 30A FRED Pt TO-247 LL 2L

  • VS-E4PU6006LHN3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 60A TO247AD. Rectifiers 600V 60A FRED Pt TO-247 LL 2L

  • SFA808G C0G

    Taiwan Semiconductor Corporation

    DIODE GEN PURP 600V 8A TO220AC. Rectifiers 35ns8A 600V Sp Fst Recov Rectifier

  • STTH3010PI

    STMicroelectronics

    DIODE GEN PURP 1KV 30A DOP3I. Diodes - General Purpose, Power, Switching high voltage diode