ON Semiconductor - FDB070AN06A0-F085

KEY Part #: K6399317

FDB070AN06A0-F085 Bei (USD) [59662pcs Hisa]

  • 1 pcs$0.65537

Nambari ya Sehemu:
FDB070AN06A0-F085
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 60V 15A TO-263AB.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Arrays, Thyristors - SCR, Viwango - Zener - Arrays, Viwango - Rectifiers - Moja, Viwango - RF, Transistors - Bipolar (BJT) - Moja, Viwango - Zener - Moja and Transistors - FET, MOSFETs - RF ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDB070AN06A0-F085 Sifa za Bidhaa

Nambari ya Sehemu : FDB070AN06A0-F085
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 60V 15A TO-263AB
Mfululizo : Automotive, AEC-Q101, PowerTrench®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 15A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 7 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 66nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 3000pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 175W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : TO-263AB
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB