Nambari ya Sehemu :
SSM6J507NU,LF
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET P-CH 30V 10A 6UDFN
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
10A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
20 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
20.4nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1150pF @ 15V
Kuondoa Nguvu (Max) :
1.25W (Ta)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
6-UDFNB (2x2)
Kifurushi / Kesi :
6-WDFN Exposed Pad