Vishay Semiconductor Diodes Division - ESH3DHE3_A/I

KEY Part #: K6456978

ESH3DHE3_A/I Bei (USD) [286357pcs Hisa]

  • 1 pcs$0.12917
  • 3,500 pcs$0.11706

Nambari ya Sehemu:
ESH3DHE3_A/I
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 200V 3A DO214AB. Rectifiers 200V 3.0A 25ns Glass Passivated
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Thyristors - SCR, Transistors - FET, MOSFETs - Arrays, Viwango - Zener - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - TRIAC and Transistors - Ushirikiano uliopangwa ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division ESH3DHE3_A/I electronic components. ESH3DHE3_A/I can be shipped within 24 hours after order. If you have any demands for ESH3DHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ESH3DHE3_A/I Sifa za Bidhaa

Nambari ya Sehemu : ESH3DHE3_A/I
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 200V 3A DO214AB
Mfululizo : Automotive, AEC-Q101
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Sasa - Wastani Aliyerekebishwa (Io) : 3A
Voltage - Mbele (Vf) (Max) @ Kama : 900mV @ 3A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 40ns
Sasa - Rejea kuvuja @ Vr : 5µA @ 200V
Uwezo @ Vr, F : 70pF @ 4V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : DO-214AB, SMC
Kifurushi cha Kifaa cha Mtoaji : DO-214AB (SMC)
Joto la Kufanya kazi - Junction : -55°C ~ 175°C

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