SISH617DN-T1-GE3 Bei (USD) [227053pcs Hisa]
- 1 pcs$0.16290
- Nambari ya Sehemu:
- SISH617DN-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET P-CHAN 30V POWERPAK 1212-.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Moja, Viwango - Rectifiers - Arrays, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Kusudi Maalum, Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - RF and Moduli za Dereva za Nguvu ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SISH617DN-T1-GE3 electronic components. SISH617DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISH617DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISH617DN-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SISH617DN-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET P-CHAN 30V POWERPAK 1212-
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
13.9A (Ta), 35A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
12.3 mOhm @ 13.9A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
59nC @ 10V
Vgs (Max) :
±25V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1800pF @ 15V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
3.7W (Ta), 52W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PowerPAK® 1212-8SH
Kifurushi / Kesi :
PowerPAK® 1212-8SH
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