Nambari ya Sehemu :
DGD2104MS8-13
Mzalishaji :
Diodes Incorporated
Maelezo :
IC GATE DRVR HALF-BRIDGE 8SO
Usanidi ulioendeshwa :
Half-Bridge
Aina ya Channel :
Synchronous
Aina ya Lango :
IGBT, N-Channel MOSFET
Voltage - Ugavi :
10V ~ 20V
Logic Voltage - VIL, VIH :
0.8V, 2.5V
Pato la Sasa (Pato, Mchanganyiko) :
290mA, 600mA
Aina ya Kuingiza :
Non-Inverting
High Side Voltage - Max (Bootstrap) :
600V
Wakati wa kupanda / Kuanguka (Aina) :
70ns, 35ns
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Mtoaji :
8-SO