DMT6009LFG-13 Bei (USD) [179158pcs Hisa]
- 1 pcs$0.20645
- 3,000 pcs$0.18272
- Nambari ya Sehemu:
- DMT6009LFG-13
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET N-CH 60V 11A POWERDI3333-.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Viwango - RF, Transistors - IGBTs - Moduli, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Zener - Moja, Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Transistors - Ushirikiano uliopangwa ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMT6009LFG-13 electronic components. DMT6009LFG-13 can be shipped within 24 hours after order. If you have any demands for DMT6009LFG-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT6009LFG-13 Sifa za Bidhaa
Nambari ya Sehemu :
DMT6009LFG-13
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET N-CH 60V 11A POWERDI3333-
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
11A (Ta), 34A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
10 mOhm @ 13.5A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
33.5nC @ 10V
Vgs (Max) :
±16V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1925pF @ 30V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
2.08W (Ta), 19.2W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PowerDI3333-8
Kifurushi / Kesi :
8-PowerWDFN
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