IXTH6N80A Bei (USD) [10759pcs Hisa]
- 1 pcs$4.42712
- 30 pcs$4.40509
- Nambari ya Sehemu:
- IXTH6N80A
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- MOSFET N-CH 800V 6A TO-247.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Arrays, Moduli za Dereva za Nguvu, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Kufika, Viwango - Zener - Arrays, Transistors - Ushirikiano uliopangwa and Transistors - IGBTs - Moduli ...
- Faida ya Ushindani:
- We specialize in IXYS IXTH6N80A electronic components. IXTH6N80A can be shipped within 24 hours after order. If you have any demands for IXTH6N80A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTH6N80A Sifa za Bidhaa
Nambari ya Sehemu :
IXTH6N80A
Mzalishaji :
IXYS
Maelezo :
MOSFET N-CH 800V 6A TO-247
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.4 Ohm @ 3A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
130nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2800pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
180W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-247 (IXTH)
Kifurushi / Kesi :
TO-247-3
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