[6195pcs Hisa]
- Nambari ya Sehemu:
- HN1B01FU-Y(L,F,T)
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- TRANS NPN/PNP 50V 0.15A US6.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Kufika, Viwango - RF, Thyristors - SCRs - Moduli, Viwango - Zener - Arrays, Viwango - Zener - Moja, Transistors - FET, MOSFETs - RF and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage HN1B01FU-Y(L,F,T) electronic components. HN1B01FU-Y(L,F,T) can be shipped within 24 hours after order. If you have any demands for HN1B01FU-Y(L,F,T), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HN1B01FU-Y(L,F,T) Sifa za Bidhaa
Nambari ya Sehemu :
HN1B01FU-Y(L,F,T)
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
TRANS NPN/PNP 50V 0.15A US6
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya Transistor :
NPN, PNP
Sasa - Mtoza (Ic) (Max) :
150mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
50V
Vce Saturdayation (Max) @ Ib, Ic :
300mV @ 10mA, 100mA
Sasa - Ushuru Mtoaji :
100nA (ICBO)
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
120 @ 2mA, 6V
Nguvu - Max :
200mW
Mara kwa mara - Mpito :
120MHz
Joto la Kufanya kazi :
125°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
6-TSSOP, SC-88, SOT-363
Kifurushi cha Kifaa cha Mtoaji :
US6
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