Nambari ya Sehemu :
SUD09P10-195-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET P-CH 100V 8.8A DPAK
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
8.8A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
195 mOhm @ 3.6A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
34.8nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1055pF @ 50V
Kuondoa Nguvu (Max) :
2.5W (Ta), 32.1W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
TO-252, (D-Pak)
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63