[3277pcs Hisa]
- Nambari ya Sehemu:
- IXTD3N60P-2J
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- MOSFET N-CH 600.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Moja, Viwango - RF, Transistors - IGBTs - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Rectifiers - Arrays, Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - RF and Transistors - FET, MOSFETs - Arrays ...
- Faida ya Ushindani:
- We specialize in IXYS IXTD3N60P-2J electronic components. IXTD3N60P-2J can be shipped within 24 hours after order. If you have any demands for IXTD3N60P-2J, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTD3N60P-2J Sifa za Bidhaa
Nambari ya Sehemu :
IXTD3N60P-2J
Mzalishaji :
IXYS
Maelezo :
MOSFET N-CH 600
Mfululizo :
PolarHV™
Hali ya Sehemu :
Last Time Buy
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
3A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
2.9 Ohm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 50µA
Malango ya Lango (Qg) (Max) @ Vgs :
9.8nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
411pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
70W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
Die
Kifurushi / Kesi :
Die
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