ON Semiconductor - NSVBA114EDXV6T1G

KEY Part #: K6528805

NSVBA114EDXV6T1G Bei (USD) [838681pcs Hisa]

  • 1 pcs$0.04410
  • 8,000 pcs$0.04165

Nambari ya Sehemu:
NSVBA114EDXV6T1G
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
TRANS 2PNP PREBIAS 0.5W SOT563.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Arrays, Transistors - IGBTs - Moja, Transistors - JFETs, Transistors - IGBTs - Moduli, Thyristors - SCR, Viwango - Zener - Moja, Transistors - FET, MOSFETs - RF and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
Faida ya Ushindani:
We specialize in ON Semiconductor NSVBA114EDXV6T1G electronic components. NSVBA114EDXV6T1G can be shipped within 24 hours after order. If you have any demands for NSVBA114EDXV6T1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NSVBA114EDXV6T1G Sifa za Bidhaa

Nambari ya Sehemu : NSVBA114EDXV6T1G
Mzalishaji : ON Semiconductor
Maelezo : TRANS 2PNP PREBIAS 0.5W SOT563
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : 2 PNP - Pre-Biased (Dual)
Sasa - Mtoza (Ic) (Max) : 100mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 10 kOhms
Upinzani - Base ya Emitter (R2) : 10 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 35 @ 5mA, 10V
Vce Saturdayation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
Sasa - Ushuru Mtoaji : 500nA
Mara kwa mara - Mpito : -
Nguvu - Max : 500mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : SOT-563, SOT-666
Kifurushi cha Kifaa cha Mtoaji : SOT-563-6

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