ON Semiconductor - FDI33N25TU

KEY Part #: K6410160

[32pcs Hisa]


    Nambari ya Sehemu:
    FDI33N25TU
    Mzalishaji:
    ON Semiconductor
    Maelezo ya kina:
    MOSFET N-CH 250V 33A I2PAK.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Transistors - FET, MOSFETs - Arrays, Transistors - Kusudi Maalum, Viwango - Bridge Rectifiers, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Zener - Arrays, Thyristors - SCRs - Moduli and Transistors - IGBTs - Moja ...
    Faida ya Ushindani:
    We specialize in ON Semiconductor FDI33N25TU electronic components. FDI33N25TU can be shipped within 24 hours after order. If you have any demands for FDI33N25TU, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FDI33N25TU Sifa za Bidhaa

    Nambari ya Sehemu : FDI33N25TU
    Mzalishaji : ON Semiconductor
    Maelezo : MOSFET N-CH 250V 33A I2PAK
    Mfululizo : UniFET™
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 250V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 33A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 94 mOhm @ 16.5A, 10V
    Vgs (th) (Max) @ Id : 5V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 48nC @ 10V
    Vgs (Max) : ±30V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 2135pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 235W (Tc)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Through Hole
    Kifurushi cha Kifaa cha Mtoaji : I2PAK (TO-262)
    Kifurushi / Kesi : TO-262-3 Long Leads, I²Pak, TO-262AA