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  5. JAN1N5809US

Microsemi Corporation - JAN1N5809US

KEY Part #: K6428074

JAN1N5809US Bei (USD) [8882pcs Hisa]

  • 1 pcs$4.66293
  • 100 pcs$4.63973
Nambari ya Sehemu:
JAN1N5809US
Mzalishaji:
Microsemi Corporation
Maelezo ya kina:
DIODE GEN PURP 100V 6A B-MELF. Rectifiers MIL, QPL PART, 3A 100V ULTRAFAST RECT- SQ END CAPS
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Moduli za Dereva za Nguvu, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - RF, Transistors - FET, MOSFETs - Arrays and Transistors - Bipolar (BJT) - RF ...
Faida ya Ushindani:
We specialize in Microsemi Corporation JAN1N5809US electronic components. JAN1N5809US can be shipped within 24 hours after order. If you have any demands for JAN1N5809US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JAN1N5809US Sifa za Bidhaa

Nambari ya Sehemu : JAN1N5809US
Mzalishaji : Microsemi Corporation
Maelezo : DIODE GEN PURP 100V 6A B-MELF
Mfululizo : Military, MIL-PRF-19500/477
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Sasa - Wastani Aliyerekebishwa (Io) : 6A
Voltage - Mbele (Vf) (Max) @ Kama : 875mV @ 4A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 30ns
Sasa - Rejea kuvuja @ Vr : 5µA @ 100V
Uwezo @ Vr, F : 60pF @ 10V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : SQ-MELF, B
Kifurushi cha Kifaa cha Mtoaji : B, SQ-MELF
Joto la Kufanya kazi - Junction : -65°C ~ 175°C

Habari mpya kabisa

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