Vishay Semiconductor Diodes Division - 1N5626GP-E3/54

KEY Part #: K6444933

[2280pcs Hisa]


    Nambari ya Sehemu:
    1N5626GP-E3/54
    Mzalishaji:
    Vishay Semiconductor Diodes Division
    Maelezo ya kina:
    DIODE GEN PURP 600V 3A DO201AD.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - RF, Transistors - JFETs, Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - Arrays, Transistors - Kusudi Maalum and Transistors - IGBTs - Moduli ...
    Faida ya Ushindani:
    We specialize in Vishay Semiconductor Diodes Division 1N5626GP-E3/54 electronic components. 1N5626GP-E3/54 can be shipped within 24 hours after order. If you have any demands for 1N5626GP-E3/54, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    1N5626GP-E3/54 Sifa za Bidhaa

    Nambari ya Sehemu : 1N5626GP-E3/54
    Mzalishaji : Vishay Semiconductor Diodes Division
    Maelezo : DIODE GEN PURP 600V 3A DO201AD
    Mfululizo : SUPERECTIFIER®
    Hali ya Sehemu : Obsolete
    Aina ya Diode : Standard
    Voltage - DC Reverse (Vr) (Max) : 600V
    Sasa - Wastani Aliyerekebishwa (Io) : 3A
    Voltage - Mbele (Vf) (Max) @ Kama : 1V @ 3A
    Kasi : Standard Recovery >500ns, > 200mA (Io)
    Rudisha Wakati wa Kuokoa (trr) : 3µs
    Sasa - Rejea kuvuja @ Vr : 5µA @ 600V
    Uwezo @ Vr, F : 40pF @ 4V, 1MHz
    Aina ya Kuinua : Through Hole
    Kifurushi / Kesi : DO-201AD, Axial
    Kifurushi cha Kifaa cha Mtoaji : DO-201AD
    Joto la Kufanya kazi - Junction : -65°C ~ 175°C

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