Nambari ya Sehemu :
GC08MPS12-252
Mzalishaji :
GeneSiC Semiconductor
Maelezo :
SIC DIODE 1200V 8A TO-252-2
Aina ya Diode :
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) :
1200V
Sasa - Wastani Aliyerekebishwa (Io) :
40A (DC)
Voltage - Mbele (Vf) (Max) @ Kama :
1.8V @ 8A
Kasi :
No Recovery Time > 500mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
0ns
Sasa - Rejea kuvuja @ Vr :
7µA @ 1200V
Uwezo @ Vr, F :
545pF @ 1V, 1MHz
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63
Kifurushi cha Kifaa cha Mtoaji :
TO-252-2
Joto la Kufanya kazi - Junction :
-55°C ~ 175°C