Nambari ya Sehemu :
JANTXV1N6629US
Mzalishaji :
Microsemi Corporation
Maelezo :
DIODE GEN PURP 800V 1.4A D5B
Voltage - DC Reverse (Vr) (Max) :
800V
Sasa - Wastani Aliyerekebishwa (Io) :
1.4A
Voltage - Mbele (Vf) (Max) @ Kama :
1.4V @ 1.4A
Kasi :
Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
60ns
Sasa - Rejea kuvuja @ Vr :
2µA @ 800V
Uwezo @ Vr, F :
40pF @ 10V, 1MHz
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
SQ-MELF, E
Kifurushi cha Kifaa cha Mtoaji :
D-5B
Joto la Kufanya kazi - Junction :
-65°C ~ 150°C