Nambari ya Sehemu :
IPD70P04P409ATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET P-CH TO252-3
Mfululizo :
Automotive, AEC-Q101, OptiMOS™
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
40V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
73A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
8.9 mOhm @ 70A, 10V
Vgs (th) (Max) @ Id :
4V @ 120µA
Malango ya Lango (Qg) (Max) @ Vgs :
70nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
4810pF @ 25V
Kuondoa Nguvu (Max) :
75W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-TO252-3-313
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63