Vishay Siliconix - SI8401DB-T1-E1

KEY Part #: K6396457

SI8401DB-T1-E1 Bei (USD) [167720pcs Hisa]

  • 1 pcs$0.22053
  • 3,000 pcs$0.20708

Nambari ya Sehemu:
SI8401DB-T1-E1
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET P-CH 20V 3.6A 2X2 4-MFP.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - RF, Moduli za Dereva za Nguvu and Thyristors - TRIAC ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SI8401DB-T1-E1 electronic components. SI8401DB-T1-E1 can be shipped within 24 hours after order. If you have any demands for SI8401DB-T1-E1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI8401DB-T1-E1 Sifa za Bidhaa

Nambari ya Sehemu : SI8401DB-T1-E1
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET P-CH 20V 3.6A 2X2 4-MFP
Mfululizo : TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 3.6A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs : 65 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id : 1.4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 17nC @ 4.5V
Vgs (Max) : ±12V
Uingizwaji uwezo (Ciss) (Max) @ Vds : -
Makala ya FET : -
Kuondoa Nguvu (Max) : 1.47W (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 4-Microfoot
Kifurushi / Kesi : 4-XFBGA, CSPBGA