Vishay Siliconix - SI7501DN-T1-GE3

KEY Part #: K6524212

SI7501DN-T1-GE3 Bei (USD) [3907pcs Hisa]

  • 1 pcs$0.53517
  • 10 pcs$0.47413
  • 100 pcs$0.37487
  • 500 pcs$0.27500
  • 1,000 pcs$0.21711

Nambari ya Sehemu:
SI7501DN-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N/P-CH 30V 5.4A 1212-8.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Transistors - FET, MOSFETs - Arrays, Viwango - Rectifiers - Moja, Thyristors - SCR, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Arrays, Thyristors - SCRs - Moduli and Viwango - Zener - Moja ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SI7501DN-T1-GE3 electronic components. SI7501DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7501DN-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7501DN-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SI7501DN-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N/P-CH 30V 5.4A 1212-8
Mfululizo : TrenchFET®
Hali ya Sehemu : Obsolete
Aina ya FET : N and P-Channel, Common Drain
Makala ya FET : Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 5.4A, 4.5A
Njia ya Kutumia (Max) @ Id, Vgs : 35 mOhm @ 7.7A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 14nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds : -
Nguvu - Max : 1.6W
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : PowerPAK® 1212-8 Dual
Kifurushi cha Kifaa cha Mtoaji : PowerPAK® 1212-8 Dual

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