Infineon Technologies - DD250S65K3NOSA1

KEY Part #: K6472790

DD250S65K3NOSA1 Bei (USD) [53pcs Hisa]

  • 1 pcs$662.63358

Nambari ya Sehemu:
DD250S65K3NOSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
IGBT MODULE VCES 6500V 250A.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Viwango - Bridge Rectifiers, Transistors - IGBTs - Moja, Viwango - Zener - Arrays, Viwango - Rectifiers - Moja, Viwango - RF, Transistors - FET, MOSFETs - Arrays and Transistors - IGBTs - Arrays ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DD250S65K3NOSA1 Sifa za Bidhaa

Nambari ya Sehemu : DD250S65K3NOSA1
Mzalishaji : Infineon Technologies
Maelezo : IGBT MODULE VCES 6500V 250A
Mfululizo : -
Hali ya Sehemu : Active
Usanidi wa Diode : 2 Independent
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 6500V
Sasa - Wastani Aliyesafishwa (Io) (kwa Diode) : -
Voltage - Mbele (Vf) (Max) @ Kama : 3.5V @ 250A
Kasi : Standard Recovery >500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : -
Sasa - Rejea kuvuja @ Vr : 370A @ 3600V
Joto la Kufanya kazi - Junction : -50°C ~ 125°C
Aina ya Kuinua : Chassis Mount
Kifurushi / Kesi : Module
Kifurushi cha Kifaa cha Mtoaji : A-IHV130-6

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