GeneSiC Semiconductor - 1N8030-GA

KEY Part #: K6428136

1N8030-GA Bei (USD) [488pcs Hisa]

  • 1 pcs$89.56064
  • 10 pcs$85.23848
  • 25 pcs$82.15037

Nambari ya Sehemu:
1N8030-GA
Mzalishaji:
GeneSiC Semiconductor
Maelezo ya kina:
DIODE SCHOTTKY 650V 750MA TO257.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Bridge Rectifiers, Viwango - Zener - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Moduli za Dereva za Nguvu, Thyristors - SCR, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Transistors - IGBTs - Arrays ...
Faida ya Ushindani:
We specialize in GeneSiC Semiconductor 1N8030-GA electronic components. 1N8030-GA can be shipped within 24 hours after order. If you have any demands for 1N8030-GA, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N8030-GA Sifa za Bidhaa

Nambari ya Sehemu : 1N8030-GA
Mzalishaji : GeneSiC Semiconductor
Maelezo : DIODE SCHOTTKY 650V 750MA TO257
Mfululizo : -
Hali ya Sehemu : Obsolete
Aina ya Diode : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Sasa - Wastani Aliyerekebishwa (Io) : 750mA
Voltage - Mbele (Vf) (Max) @ Kama : 1.39V @ 750mA
Kasi : No Recovery Time > 500mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 0ns
Sasa - Rejea kuvuja @ Vr : 5µA @ 650V
Uwezo @ Vr, F : 76pF @ 1V, 1MHz
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : TO-257-3
Kifurushi cha Kifaa cha Mtoaji : TO-257
Joto la Kufanya kazi - Junction : -55°C ~ 250°C
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