Nambari ya Sehemu :
TPH6400ENH,L1Q
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N-CH 200V 21A 8-SOP
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
13A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
64 mOhm @ 6.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 300µA
Malango ya Lango (Qg) (Max) @ Vgs :
11.2nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1100pF @ 100V
Kuondoa Nguvu (Max) :
1.6W (Ta), 57W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-SOP Advance (5x5)
Kifurushi / Kesi :
8-PowerVDFN