Infineon Technologies - IPB017N06N3GATMA1

KEY Part #: K6417620

IPB017N06N3GATMA1 Bei (USD) [36161pcs Hisa]

  • 1 pcs$1.08126

Nambari ya Sehemu:
IPB017N06N3GATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 60V 180A TO263-7.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Transistors - FET, MOSFETs - RF, Thyristors - SCR, Transistors - Ushirikiano uliopangwa, Transistors - IGBTs - Moduli, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Kufika and Thyristors - DIAC, SIDAC ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB017N06N3GATMA1 Sifa za Bidhaa

Nambari ya Sehemu : IPB017N06N3GATMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 60V 180A TO263-7
Mfululizo : OptiMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 180A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 1.7 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 4V @ 196µA
Malango ya Lango (Qg) (Max) @ Vgs : 275nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 23000pF @ 30V
Makala ya FET : -
Kuondoa Nguvu (Max) : 250W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-TO263-7
Kifurushi / Kesi : TO-263-7, D²Pak (6 Leads + Tab)

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