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  5. IS65WV12816BLL-55TLA3

ISSI, Integrated Silicon Solution Inc - IS65WV12816BLL-55TLA3

KEY Part #: K939186

IS65WV12816BLL-55TLA3 Bei (USD) [24047pcs Hisa]

  • 1 pcs$1.91511
  • 270 pcs$1.90559
Nambari ya Sehemu:
IS65WV12816BLL-55TLA3
Mzalishaji:
ISSI, Integrated Silicon Solution Inc
Maelezo ya kina:
IC SRAM 2M PARALLEL 44TSOP II. SRAM 2M (128Kx16) 55ns Async SRAM
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Maingiliano - Wasafirishaji, Watangazaji, Wabadili, Iliyoingizwa - Microcontroller - Maombi Maalum, Maelewano - Utaratibu wa Dijiti wa moja kwa moja (, Saa / Saa - Clocks halisi za saa, PMIC - Viwango vya kudhibiti - Dereva wa DC DC Kub, Iliyoingizwa - FPGAs (Ardhi inayopangwa kwa Mlango, Linear - Usindikaji wa Video and Saa / Majira ya saa - Bafa ya Clock, Madereva ...
Faida ya Ushindani:
We specialize in ISSI, Integrated Silicon Solution Inc IS65WV12816BLL-55TLA3 electronic components. IS65WV12816BLL-55TLA3 can be shipped within 24 hours after order. If you have any demands for IS65WV12816BLL-55TLA3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IS65WV12816BLL-55TLA3 Sifa za Bidhaa

Nambari ya Sehemu : IS65WV12816BLL-55TLA3
Mzalishaji : ISSI, Integrated Silicon Solution Inc
Maelezo : IC SRAM 2M PARALLEL 44TSOP II
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : SRAM
Teknolojia : SRAM - Asynchronous
Saizi ya kumbukumbu : 2Mb (128K x 16)
Usafirishaji wa Saa : -
Andika Wakati wa Msaada - Neno, Ukurasa : 55ns
Wakati wa Upataji : 55ns
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 2.5V ~ 3.6V
Joto la Kufanya kazi : -40°C ~ 125°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 44-TSOP (0.400", 10.16mm Width)
Kifurushi cha Kifaa cha Mtoaji : 44-TSOP II

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