FP150R07N3E4BOSA1 Bei (USD) [660pcs Hisa]
- 1 pcs$70.35927
- Nambari ya Sehemu:
- FP150R07N3E4BOSA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- IGBT MODULE VCES 650V 150A.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Kufika, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Moja, Transistors - Kusudi Maalum, Transistors - IGBTs - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Transistors - FET, MOSFETs - RF ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies FP150R07N3E4BOSA1 electronic components. FP150R07N3E4BOSA1 can be shipped within 24 hours after order. If you have any demands for FP150R07N3E4BOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FP150R07N3E4BOSA1 Sifa za Bidhaa
Nambari ya Sehemu :
FP150R07N3E4BOSA1
Mzalishaji :
Infineon Technologies
Maelezo :
IGBT MODULE VCES 650V 150A
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya IGBT :
Trench Field Stop
Usanidi :
Three Phase Inverter
Voltage - Kukusanya Emitter Kuvunja (Max) :
650V
Sasa - Mtoza (Ic) (Max) :
150A
Nguvu - Max :
430W
Vce (on) (Max) @ Vge, Ic :
1.95V @ 15V, 150A
Sasa - Ushuru Mtoaji :
1mA
Uingilivu Ufungaji (Wakuu) @ Vce :
9.3nF @ 25V
Uingizaji :
Standard
Mtaalam wa NTC :
Yes
Joto la Kufanya kazi :
-40°C ~ 150°C
Aina ya Kuinua :
Chassis Mount
Kifurushi / Kesi :
Module
Kifurushi cha Kifaa cha Mtoaji :
Module
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
-
VS-ETL015Y120H
Vishay Semiconductor Diodes Division
IGBT 1200V 22A 89W EMIPAK-2B. Rectifiers 15A Dbl Interleaved Boost Converter
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