Nambari ya Sehemu :
FCP190N65S3R0
Mzalishaji :
ON Semiconductor
Maelezo :
MOSFET N-CH 650V 190MOHM TO220 I
Mfululizo :
SuperFET® III
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
650V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
17A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
190 mOhm @ 8.5A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 1.7mA
Malango ya Lango (Qg) (Max) @ Vgs :
33nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1350pF @ 400V
Kuondoa Nguvu (Max) :
144W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-220-3
Kifurushi / Kesi :
TO-220-3