IXYS - MMIX1T550N055T2

KEY Part #: K6395852

MMIX1T550N055T2 Bei (USD) [2788pcs Hisa]

  • 1 pcs$17.16914
  • 20 pcs$17.08372

Nambari ya Sehemu:
MMIX1T550N055T2
Mzalishaji:
IXYS
Maelezo ya kina:
MOSFET N-CH 55V 550A SMPD.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Transistors - IGBTs - Arrays, Viwango - Zener - Moja, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - RF, Thyristors - DIAC, SIDAC and Transistors - FET, MOSFETs - RF ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MMIX1T550N055T2 Sifa za Bidhaa

Nambari ya Sehemu : MMIX1T550N055T2
Mzalishaji : IXYS
Maelezo : MOSFET N-CH 55V 550A SMPD
Mfululizo : FRFET®, SupreMOS®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 55V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 550A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 1.3 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 3.8V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 595nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 40000pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 830W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 24-SMPD
Kifurushi / Kesi : 24-PowerSMD, 21 Leads