[3278pcs Hisa]
- Nambari ya Sehemu:
- IXTD4N80P-3J
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- MOSFET N-CH 800.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - SCR, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Transistors - Ushirikiano uliopangwa and Viwango - Rectifiers - Moja ...
- Faida ya Ushindani:
- We specialize in IXYS IXTD4N80P-3J electronic components. IXTD4N80P-3J can be shipped within 24 hours after order. If you have any demands for IXTD4N80P-3J, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTD4N80P-3J Sifa za Bidhaa
Nambari ya Sehemu :
IXTD4N80P-3J
Mzalishaji :
IXYS
Maelezo :
MOSFET N-CH 800
Mfululizo :
PolarHV™
Hali ya Sehemu :
Last Time Buy
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
3.6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
3.4 Ohm @ 1.8A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 100µA
Malango ya Lango (Qg) (Max) @ Vgs :
14.2nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
750pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
100W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
Die
Kifurushi / Kesi :
Die
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