Nambari ya Sehemu :
GI752-E3/54
Mzalishaji :
Vishay Semiconductor Diodes Division
Maelezo :
DIODE GEN PURP 200V 6A P600
Voltage - DC Reverse (Vr) (Max) :
200V
Sasa - Wastani Aliyerekebishwa (Io) :
6A
Voltage - Mbele (Vf) (Max) @ Kama :
900mV @ 6A
Kasi :
Standard Recovery >500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
2.5µs
Sasa - Rejea kuvuja @ Vr :
5µA @ 200V
Uwezo @ Vr, F :
150pF @ 4V, 1MHz
Aina ya Kuinua :
Through Hole
Kifurushi / Kesi :
P600, Axial
Kifurushi cha Kifaa cha Mtoaji :
P600
Joto la Kufanya kazi - Junction :
-50°C ~ 150°C