IRFB31N20DPBF Bei (USD) [38966pcs Hisa]
- 1 pcs$0.96163
- 10 pcs$0.87007
- 100 pcs$0.69911
- 500 pcs$0.54376
- 1,000 pcs$0.45054
- Nambari ya Sehemu:
- IRFB31N20DPBF
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 200V 31A TO-220AB.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Bridge Rectifiers, Transistors - IGBTs - Moja, Viwango - Zener - Arrays, Transistors - Ushirikiano uliopangwa, Thyristors - DIAC, SIDAC, Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Kufika and Transistors - FET, MOSFETs - RF ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IRFB31N20DPBF electronic components. IRFB31N20DPBF can be shipped within 24 hours after order. If you have any demands for IRFB31N20DPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB31N20DPBF Sifa za Bidhaa
Nambari ya Sehemu :
IRFB31N20DPBF
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 200V 31A TO-220AB
Mfululizo :
HEXFET®
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
31A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
82 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
107nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2370pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
3.1W (Ta), 200W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-220AB
Kifurushi / Kesi :
TO-220-3
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