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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

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  1. Nyumbani
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  5. IS43DR86400C-3DBL

ISSI, Integrated Silicon Solution Inc - IS43DR86400C-3DBL

KEY Part #: K939432

IS43DR86400C-3DBL Bei (USD) [25136pcs Hisa]

  • 1 pcs$2.18108
  • 242 pcs$2.17023
Nambari ya Sehemu:
IS43DR86400C-3DBL
Mzalishaji:
ISSI, Integrated Silicon Solution Inc
Maelezo ya kina:
IC DRAM 512M PARALLEL 60TWBGA. DRAM 512M, 1.8V, 333Mhz 64Mx8 DDR2 SDRAM
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Kumbukumbu, Iliyoingizwa - Microprocessors, Mantiki - Kumbukumbu za FIFO, Linear - Amplifiers - Chombo, OP Amps, Buffer Amps, Iliyoingizwa - Microcontroller - Maombi Maalum, PMIC - Watawala wa Ugavi wa Nguvu, Wachunguzi, Maingiliano - Madereva, Wapokeaji, Waendeshaji kup and PMIC - Udhibiti / Usimamizi wa sasa ...
Faida ya Ushindani:
We specialize in ISSI, Integrated Silicon Solution Inc IS43DR86400C-3DBL electronic components. IS43DR86400C-3DBL can be shipped within 24 hours after order. If you have any demands for IS43DR86400C-3DBL, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IS43DR86400C-3DBL Sifa za Bidhaa

Nambari ya Sehemu : IS43DR86400C-3DBL
Mzalishaji : ISSI, Integrated Silicon Solution Inc
Maelezo : IC DRAM 512M PARALLEL 60TWBGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - DDR2
Saizi ya kumbukumbu : 512Mb (64M x 8)
Usafirishaji wa Saa : 333MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 15ns
Wakati wa Upataji : 450ps
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 1.7V ~ 1.9V
Joto la Kufanya kazi : 0°C ~ 70°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 60-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 60-TWBGA (8x10.5)

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