Diodes Incorporated - DDTB113EU-7-F

KEY Part #: K6527217

DDTB113EU-7-F Bei (USD) [1427371pcs Hisa]

  • 1 pcs$0.02591
  • 3,000 pcs$0.02401
  • 6,000 pcs$0.02088
  • 15,000 pcs$0.01775
  • 30,000 pcs$0.01671
  • 75,000 pcs$0.01566

Nambari ya Sehemu:
DDTB113EU-7-F
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
TRANS PREBIAS PNP 200MW SOT323.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Transistors - JFETs, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - FET, MOSFETs - Moja, Thyristors - SCR, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Moduli za Dereva za Nguvu ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DDTB113EU-7-F electronic components. DDTB113EU-7-F can be shipped within 24 hours after order. If you have any demands for DDTB113EU-7-F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DDTB113EU-7-F Sifa za Bidhaa

Nambari ya Sehemu : DDTB113EU-7-F
Mzalishaji : Diodes Incorporated
Maelezo : TRANS PREBIAS PNP 200MW SOT323
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : PNP - Pre-Biased
Sasa - Mtoza (Ic) (Max) : 500mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 1 kOhms
Upinzani - Base ya Emitter (R2) : 1 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 33 @ 50mA, 5V
Vce Saturdayation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Sasa - Ushuru Mtoaji : 500nA
Mara kwa mara - Mpito : 200MHz
Nguvu - Max : 200mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : SC-70, SOT-323
Kifurushi cha Kifaa cha Mtoaji : SOT-323

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