Vishay Semiconductor Diodes Division - SE10FJ-M3/I

KEY Part #: K6440123

SE10FJ-M3/I Bei (USD) [1397927pcs Hisa]

  • 1 pcs$0.02792
  • 30,000 pcs$0.02778

Nambari ya Sehemu:
SE10FJ-M3/I
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 600V 1A DO219AB. Rectifiers 1A 600V ESD Prot SMF Rectifier
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Viwango - Bridge Rectifiers, Thyristors - DIAC, SIDAC, Viwango - RF, Thyristors - SCR, Transistors - FET, MOSFETs - Moja, Viwango - Zener - Moja and Thyristors - TRIAC ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division SE10FJ-M3/I electronic components. SE10FJ-M3/I can be shipped within 24 hours after order. If you have any demands for SE10FJ-M3/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SE10FJ-M3/I Sifa za Bidhaa

Nambari ya Sehemu : SE10FJ-M3/I
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 600V 1A DO219AB
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Sasa - Wastani Aliyerekebishwa (Io) : 1A
Voltage - Mbele (Vf) (Max) @ Kama : 1.05V @ 1A
Kasi : Standard Recovery >500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 780ns
Sasa - Rejea kuvuja @ Vr : 5µA @ 600V
Uwezo @ Vr, F : 7.5pF @ 4V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : DO-219AB
Kifurushi cha Kifaa cha Mtoaji : DO-219AB (SMF)
Joto la Kufanya kazi - Junction : -55°C ~ 175°C

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