Vishay Siliconix - SIZ988DT-T1-GE3

KEY Part #: K6523288

SIZ988DT-T1-GE3 Bei (USD) [164129pcs Hisa]

  • 1 pcs$0.22536

Nambari ya Sehemu:
SIZ988DT-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET 2 N-CH 30V 8-POWERPAIR.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Transistors - Kusudi Maalum, Transistors - IGBTs - Arrays, Transistors - FET, MOSFETs - RF, Transistors - FET, MOSFETs - Moja, Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Transistors - Ushirikiano uliopangwa ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SIZ988DT-T1-GE3 electronic components. SIZ988DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ988DT-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIZ988DT-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SIZ988DT-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET 2 N-CH 30V 8-POWERPAIR
Mfululizo : TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Standard
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 40A (Tc), 60A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs : 7.5 mOhm @ 10A, 10V, 4.1 mOhm @ 19A, 10V
Vgs (th) (Max) @ Id : 2.4V @ 250µA, 2.2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 10.5nC @ 4.5V, 23.1nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1000pF @ 15V, 2425pF @ 15V
Nguvu - Max : 20.2W, 40W
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 8-PowerWDFN
Kifurushi cha Kifaa cha Mtoaji : 8-PowerPair®