RF4E080BNTR Bei (USD) [396411pcs Hisa]
- 1 pcs$0.10315
- 3,000 pcs$0.10264
- Nambari ya Sehemu:
- RF4E080BNTR
- Mzalishaji:
- Rohm Semiconductor
- Maelezo ya kina:
- MOSFET N-CH 30V 8A 8-HUML.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - RF, Viwango - Zener - Moja, Viwango - RF and Transistors - Ushirikiano uliopangwa ...
- Faida ya Ushindani:
- We specialize in Rohm Semiconductor RF4E080BNTR electronic components. RF4E080BNTR can be shipped within 24 hours after order. If you have any demands for RF4E080BNTR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RF4E080BNTR Sifa za Bidhaa
Nambari ya Sehemu :
RF4E080BNTR
Mzalishaji :
Rohm Semiconductor
Maelezo :
MOSFET N-CH 30V 8A 8-HUML
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
8A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
17.6 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
14.5nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
660pF @ 15V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
2W (Ta)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
HUML2020L8
Kifurushi / Kesi :
8-PowerUDFN
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