Vishay Semiconductor Diodes Division - BYT51M-TAP

KEY Part #: K6439135

BYT51M-TAP Bei (USD) [445338pcs Hisa]

  • 1 pcs$0.08347
  • 25,000 pcs$0.08305

Nambari ya Sehemu:
BYT51M-TAP
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE AVALANCHE 1KV 1.5A SOD57.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Thyristors - SCRs - Moduli, Transistors - IGBTs - Moja, Viwango - Rectifiers - Arrays, Viwango - Bridge Rectifiers, Transistors - JFETs, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division BYT51M-TAP electronic components. BYT51M-TAP can be shipped within 24 hours after order. If you have any demands for BYT51M-TAP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYT51M-TAP Sifa za Bidhaa

Nambari ya Sehemu : BYT51M-TAP
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE AVALANCHE 1KV 1.5A SOD57
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Avalanche
Voltage - DC Reverse (Vr) (Max) : 1000V
Sasa - Wastani Aliyerekebishwa (Io) : 1.5A
Voltage - Mbele (Vf) (Max) @ Kama : 1.1V @ 1A
Kasi : Standard Recovery >500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 4µs
Sasa - Rejea kuvuja @ Vr : 1µA @ 1000V
Uwezo @ Vr, F : -
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : SOD-57, Axial
Kifurushi cha Kifaa cha Mtoaji : SOD-57
Joto la Kufanya kazi - Junction : -55°C ~ 175°C

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