Infineon Technologies - IKD06N60RAATMA2

KEY Part #: K6424945

IKD06N60RAATMA2 Bei (USD) [126706pcs Hisa]

  • 1 pcs$0.29191
  • 2,500 pcs$0.29012

Nambari ya Sehemu:
IKD06N60RAATMA2
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
IGBT 600V 12A 100W TO252-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Moja, Viwango - Rectifiers - Moja, Thyristors - DIAC, SIDAC, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Arrays and Viwango - Zener - Moja ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IKD06N60RAATMA2 Sifa za Bidhaa

Nambari ya Sehemu : IKD06N60RAATMA2
Mzalishaji : Infineon Technologies
Maelezo : IGBT 600V 12A 100W TO252-3
Mfululizo : TrenchStop®
Hali ya Sehemu : Not For New Designs
Aina ya IGBT : Trench
Voltage - Kukusanya Emitter Kuvunja (Max) : 600V
Sasa - Mtoza (Ic) (Max) : 12A
Sasa - Mtoza Ushuru (Icm) : 18A
Vce (on) (Max) @ Vge, Ic : 2.1V @ 15V, 6A
Nguvu - Max : 100W
Kubadilisha Nishati : -
Aina ya Kuingiza : Standard
Malango ya Lango : 48nC
Td (on / off) @ 25 ° C : 12ns/127ns
Hali ya Uchunguzi : 400V, 6A, 23 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) : 68ns
Joto la Kufanya kazi : -40°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63
Kifurushi cha Kifaa cha Mtoaji : PG-TO252-3