IXTU01N100D Bei (USD) [77675pcs Hisa]
- 1 pcs$0.55650
- 75 pcs$0.55373
- Nambari ya Sehemu:
- IXTU01N100D
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- MOSFET N-CH 1000V 0.1A TO-251.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - SCR, Thyristors - DIAC, SIDAC, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Kufika, Thyristors - TRIAC, Viwango - Bridge Rectifiers and Transistors - FET, MOSFETs - Arrays ...
- Faida ya Ushindani:
- We specialize in IXYS IXTU01N100D electronic components. IXTU01N100D can be shipped within 24 hours after order. If you have any demands for IXTU01N100D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTU01N100D Sifa za Bidhaa
Nambari ya Sehemu :
IXTU01N100D
Mzalishaji :
IXYS
Maelezo :
MOSFET N-CH 1000V 0.1A TO-251
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
1000V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
100mA (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
0V
Njia ya Kutumia (Max) @ Id, Vgs :
80 Ohm @ 50mA, 0V
Vgs (th) (Max) @ Id :
5V @ 25µA
Malango ya Lango (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
120pF @ 25V
Makala ya FET :
Depletion Mode
Kuondoa Nguvu (Max) :
1.1W (Ta), 25W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-251
Kifurushi / Kesi :
TO-251-3 Short Leads, IPak, TO-251AA
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