Nambari ya Sehemu :
2SK1119(F)
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N-CH 1000V 4A TO-220AB
Hali ya Sehemu :
Obsolete
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
1000V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
4A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
3.8 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
60nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
700pF @ 25V
Kuondoa Nguvu (Max) :
100W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-220AB
Kifurushi / Kesi :
TO-220-3