Toshiba Semiconductor and Storage - RN1902FE,LF(CT

KEY Part #: K6529589

RN1902FE,LF(CT Bei (USD) [1436579pcs Hisa]

  • 1 pcs$0.02588
  • 4,000 pcs$0.02575

Nambari ya Sehemu:
RN1902FE,LF(CT
Mzalishaji:
Toshiba Semiconductor and Storage
Maelezo ya kina:
TRANS 2NPN PREBIAS 0.1W ES6.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Viwango - Zener - Moja, Thyristors - TRIAC, Transistors - JFETs, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Moja, Viwango - Bridge Rectifiers and Thyristors - SCR ...
Faida ya Ushindani:
We specialize in Toshiba Semiconductor and Storage RN1902FE,LF(CT electronic components. RN1902FE,LF(CT can be shipped within 24 hours after order. If you have any demands for RN1902FE,LF(CT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN1902FE,LF(CT Sifa za Bidhaa

Nambari ya Sehemu : RN1902FE,LF(CT
Mzalishaji : Toshiba Semiconductor and Storage
Maelezo : TRANS 2NPN PREBIAS 0.1W ES6
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : 2 NPN - Pre-Biased (Dual)
Sasa - Mtoza (Ic) (Max) : 100mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 10 kOhms
Upinzani - Base ya Emitter (R2) : 1 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
Vce Saturdayation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Sasa - Ushuru Mtoaji : 100nA (ICBO)
Mara kwa mara - Mpito : 250MHz
Nguvu - Max : 100mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : SOT-563, SOT-666
Kifurushi cha Kifaa cha Mtoaji : ES6

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