Vishay Semiconductor Diodes Division - BYWE29-100-E3/45

KEY Part #: K6456798

BYWE29-100-E3/45 Bei (USD) [205604pcs Hisa]

  • 1 pcs$0.18984
  • 3,000 pcs$0.18889

Nambari ya Sehemu:
BYWE29-100-E3/45
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 100V 8A TO220AC.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - SCR, Transistors - FET, MOSFETs - Moja, Viwango - Rectifiers - Arrays, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Transistors - Ushirikiano uliopangwa ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division BYWE29-100-E3/45 electronic components. BYWE29-100-E3/45 can be shipped within 24 hours after order. If you have any demands for BYWE29-100-E3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYWE29-100-E3/45 Sifa za Bidhaa

Nambari ya Sehemu : BYWE29-100-E3/45
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 100V 8A TO220AC
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Sasa - Wastani Aliyerekebishwa (Io) : 8A
Voltage - Mbele (Vf) (Max) @ Kama : 1.3V @ 20A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 25ns
Sasa - Rejea kuvuja @ Vr : 10µA @ 100V
Uwezo @ Vr, F : 45pF @ 4V, 1MHz
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : TO-220-2
Kifurushi cha Kifaa cha Mtoaji : TO-220AC
Joto la Kufanya kazi - Junction : -65°C ~ 150°C

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