Infineon Technologies - 6MS20017E43W38170NOSA1

KEY Part #: K6532487

6MS20017E43W38170NOSA1 Bei (USD) [2pcs Hisa]

  • 1 pcs$12531.40530

Nambari ya Sehemu:
6MS20017E43W38170NOSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
IGBT MODULE 690V 1200A.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Moja, Thyristors - SCR, Transistors - Kusudi Maalum, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Bridge Rectifiers, Thyristors - DIAC, SIDAC and Transistors - FET, MOSFETs - Moja ...
Faida ya Ushindani:
We specialize in Infineon Technologies 6MS20017E43W38170NOSA1 electronic components. 6MS20017E43W38170NOSA1 can be shipped within 24 hours after order. If you have any demands for 6MS20017E43W38170NOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

6MS20017E43W38170NOSA1 Sifa za Bidhaa

Nambari ya Sehemu : 6MS20017E43W38170NOSA1
Mzalishaji : Infineon Technologies
Maelezo : IGBT MODULE 690V 1200A
Mfululizo : -
Hali ya Sehemu : Active
Aina ya IGBT : -
Usanidi : Three Phase Inverter
Voltage - Kukusanya Emitter Kuvunja (Max) : 1700V
Sasa - Mtoza (Ic) (Max) : -
Nguvu - Max : -
Vce (on) (Max) @ Vge, Ic : -
Sasa - Ushuru Mtoaji : -
Uingilivu Ufungaji (Wakuu) @ Vce : -
Uingizaji : Standard
Mtaalam wa NTC : Yes
Joto la Kufanya kazi : -25°C ~ 55°C
Aina ya Kuinua : Chassis Mount
Kifurushi / Kesi : Module
Kifurushi cha Kifaa cha Mtoaji : Module

Unaweza pia Kuvutiwa Na
  • GA100SICP12-227

    GeneSiC Semiconductor

    SIC CO-PACK SJT/RECT 100A 1.2KV.

  • VS-ENQ030L120S

    Vishay Semiconductor Diodes Division

    IGBT 1200V 61A 216W EMIPAK-1B. Rectifiers 30A Neutral Point Clamp Topology

  • VS-ETF150Y65N

    Vishay Semiconductor Diodes Division

    IGBT 650V 150A EMIPAK-2B.

  • CPV362M4F

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 8.8A IMS-2.

  • A2C35S12M3

    STMicroelectronics

    IGBT TRENCH 1200V 35A ACEPACK2.

  • A2C25S12M3

    STMicroelectronics

    IGBT TRENCH 1200V 25A ACEPACK2.