Vishay Semiconductor Diodes Division - BYG21M-E3/TR

KEY Part #: K6457014

BYG21M-E3/TR Bei (USD) [675536pcs Hisa]

  • 1 pcs$0.05475
  • 1,800 pcs$0.05098
  • 3,600 pcs$0.04673
  • 5,400 pcs$0.04390
  • 12,600 pcs$0.04106
  • 45,000 pcs$0.03776

Nambari ya Sehemu:
BYG21M-E3/TR
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE AVALANCHE 1KV 1.5A. Rectifiers 1.5 Amp 1000 Volt
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - FET, MOSFETs - Arrays, Viwango - RF, Transistors - IGBTs - Arrays, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Transistors - IGBTs - Moduli ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division BYG21M-E3/TR electronic components. BYG21M-E3/TR can be shipped within 24 hours after order. If you have any demands for BYG21M-E3/TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG21M-E3/TR Sifa za Bidhaa

Nambari ya Sehemu : BYG21M-E3/TR
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE AVALANCHE 1KV 1.5A
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Avalanche
Voltage - DC Reverse (Vr) (Max) : 1000V
Sasa - Wastani Aliyerekebishwa (Io) : 1.5A
Voltage - Mbele (Vf) (Max) @ Kama : 1.6V @ 1.5A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 120ns
Sasa - Rejea kuvuja @ Vr : 1µA @ 1000V
Uwezo @ Vr, F : -
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : DO-214AC, SMA
Kifurushi cha Kifaa cha Mtoaji : DO-214AC (SMA)
Joto la Kufanya kazi - Junction : -55°C ~ 150°C

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