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  1. Nyumbani
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  5. MT47H64M8CB-5E:B

Micron Technology Inc. - MT47H64M8CB-5E:B

KEY Part #: K905905

[12332pcs Hisa]

    Nambari ya Sehemu:
    MT47H64M8CB-5E:B
    Mzalishaji:
    Micron Technology Inc.
    Maelezo ya kina:
    IC DRAM 512M PARALLEL 60FBGA.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Kumbukumbu - Batri, PMIC - Vidhibiti vya Voltage - Linear + Kubadilish, Kusudi Maalum la Sauti, PMIC - Madereva wa Magari, Watawala, Saa / Majira ya saa - Bafa ya Clock, Madereva, Mantiki - Watafsiri, Shifters za Kiwango, Maelewano - Utaratibu wa Dijiti wa moja kwa moja ( and PMIC - Taa, Kidhibiti cha Ballast ...
    Faida ya Ushindani:
    We specialize in Micron Technology Inc. MT47H64M8CB-5E:B electronic components. MT47H64M8CB-5E:B can be shipped within 24 hours after order. If you have any demands for MT47H64M8CB-5E:B, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    MT47H64M8CB-5E:B Sifa za Bidhaa

    Nambari ya Sehemu : MT47H64M8CB-5E:B
    Mzalishaji : Micron Technology Inc.
    Maelezo : IC DRAM 512M PARALLEL 60FBGA
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya kumbukumbu : Volatile
    Fomati ya kumbukumbu : DRAM
    Teknolojia : SDRAM - DDR2
    Saizi ya kumbukumbu : 512Mb (64M x 8)
    Usafirishaji wa Saa : 200MHz
    Andika Wakati wa Msaada - Neno, Ukurasa : 15ns
    Wakati wa Upataji : 600ps
    Maingiliano ya kumbukumbu : Parallel
    Voltage - Ugavi : 1.7V ~ 1.9V
    Joto la Kufanya kazi : 0°C ~ 85°C (TC)
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : 60-FBGA
    Kifurushi cha Kifaa cha Mtoaji : 60-FBGA

    Habari mpya kabisa

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    Micron NAND Flash
    Micron 9200 NVMe™ SSDs
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    Micron SLC NAND Flash Memory
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